Seoul, South Korea

Chang-beom Shin

This inventor holds 6 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2010-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-beom Shin. Retrieved from https://idiyas.com/inventor/chang-beom-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 33.3

Average Co-Inventor Count = 1.9

ph-index = 4

Forward Citations = 42(Granted Patents)


Company Filing History:


Years Active: 2010-2020

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6 patents (USPTO):Explore Patents

Title: Chang-beom Shin: Innovator from Seoul

Introduction: Chang-beom Shin is a renowned inventor hailing from Seoul, South Korea. His contributions to the field of innovation have made a significant impact on various industries worldwide.

Latest Patents: Chang-beom Shin holds several patents in the areas of advanced materials, nanotechnology, and renewable energy. His innovative ideas have led to groundbreaking developments in these fields, showcasing his dedication to pushing the boundaries of technology.

Career Highlights: With a background in materials science and engineering, Chang-beom Shin has had a distinguished career marked by numerous achievements. He has worked on projects that have revolutionized the way we approach sustainability and energy efficiency.

Collaborations: Throughout his career, Chang-beom Shin has collaborated with leading research institutions, universities, and companies globally. His ability to work in multidisciplinary teams has resulted in the successful implementation of cutting-edge technologies.

Conclusion: Chang-beom Shin's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors and researchers to push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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