Chang-beom Jeong

Title: Chang-beom Jeong: Innovator in Semiconductor Technology

Introduction

Chang-beom Jeong is a notable inventor based in Bucheon, South Korea. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

His latest patents include methods for manufacturing SOI substrates using wafer bonding and complementary high voltage bipolar transistors utilizing the SOI substrate. The method involves forming a low density impurity region in a first semiconductor substrate and a high density impurity region within it. A trench is created surrounding these regions, with its depth being deeper than the high density impurity region and shallower than the low density impurity region. An insulating layer is then formed on the surface of the first semiconductor substrate to fill the trench. Subsequently, a second semiconductor substrate is attached to the insulating layer, and a portion of the first semiconductor substrate is removed to expose the bottom of the trench.

Career Highlights

Chang-beom Jeong is currently employed at Fairchild Korea Semiconductor Ltd., where he continues to advance semiconductor technologies. His work has been instrumental in developing methods that enhance the efficiency and performance of semiconductor devices.

Collaborations

He has collaborated with notable coworkers, including Jong-hwan Kim and Gi-ho Cha, contributing to various projects within the semiconductor industry.

Conclusion

Chang-beom Jeong's innovative work in semiconductor technology and his contributions through his patents highlight his role as a key figure in the field. His ongoing efforts at Fairchild Korea Semiconductor Ltd. continue to push the boundaries of what is possible in semiconductor manufacturing.