Los Gatos, CA, United States of America

Chan-Syun David Yang

This inventor holds 1 USPTO granted patent. Top assignee: Lam Research Corporation. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chan-Syun David Yang. Retrieved from https://idiyas.com/inventor/chan-syun-david-yang-e4bz0w3o

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Innovations by Chan-Syun David Yang in Semiconductor Fabrication

Introduction

Chan-Syun David Yang is an accomplished inventor based in Los Gatos, CA. He has made significant contributions to the field of semiconductor fabrication, particularly through his innovative methods and compositions for post-etch layer stack treatment.

Latest Patents

Yang holds a patent titled "Methods and compositions for post-etch layer stack treatment in semiconductor fabrication." This patent focuses on methods for treating a wafer's layer stack following metal etching. The techniques involve utilizing a plasma processing system to treat the layer stack with specific process gases, including helium and water or oxygen. These methods effectively reduce corrosion and polymer fence issues compared to conventional processes, while also decreasing passivation time and improving strip uniformity.

Career Highlights

Chan-Syun David Yang is currently employed at Lam Research Corporation, a leading company in the semiconductor industry. His work has been instrumental in advancing technologies that enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Yang collaborates with his coworker, Yun-Yen Jack Yang, contributing to the innovative environment at Lam Research Corporation.

Conclusion

Chan-Syun David Yang's contributions to semiconductor fabrication through his patented methods demonstrate his expertise and commitment to innovation in the field. His work continues to influence advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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