Hopewell Junction, NY, United States of America

Chakrapani G Jambotkar

This inventor holds 23 USPTO granted patents, primarily in Bipolar Transistor Technology. Top assignee: International Business Machines Corporation. Active years: 1977-1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chakrapani G Jambotkar. Retrieved from https://idiyas.com/inventor/chakrapani-g-jambotkar

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23

% Patents Active = 100.0

Average Co-Inventor Count = 1.1

ph-index = 13

Forward Citations = 440(Granted Patents)

Company Filing History:

23 out of 166,409

International Business Machines Corporation

patents

Years Active: 1977-1991

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Areas of Expertise:

Bipolar Transistor

Integrated Circuit

Heterojunction

Field Effect Transistor

Optoelectronics

Charge-Coupled Device

Planarity Improvement

Self-Aligned Process

Power Transistors

Ion Implantation

Memory Cell

Fabrication Method

23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5064772 - Bipolar transistor integrated circuit technology (1991-11-12),

2. 4981807 - Process for fabricating complementary vertical transistor memory cell (1991-01-01),

3. 4967253 - Bipolar transistor integrated circuit technology (1990-10-30),

4. 4954457 - Method of making heterojunction bipolar transistors (1990-09-04),

5. 4935797 - Heterojunction bipolar transistors (1990-06-19),

6. 4933302 - Formation of laser mirror facets and integration of optoelectronics (1990-06-12),

7. 4689869 - Fabrication of insulated gate gallium arsenide FET with self-aligned (1987-09-01),

8. 4663832 - Method for improving the planarity and passivation in a semiconductor (1987-05-12),

9. 4584763 - One mask technique for substrate contacting in integrated circuits (1986-04-29),

10. 4488162 - Self-aligned metal field effect transistor integrated circuits using (1984-12-11),

11. 4471522 - Self-aligned metal process for field effect transistor integrated (1984-09-18),

12. 4378627 - Self-aligned metal process for field effect transistor integrated (1983-04-05),

13. 4319932 - Method of making high performance bipolar transistor with polysilicon (1982-03-16),

14. 4294002 - Making a short-channel FET (1981-10-13),

15. 4264857 - Constant voltage threshold device (1981-04-28),

Title: Innovations by Chakrapani G Jambotkar

Introduction

Chakrapani G Jambotkar is an accomplished inventor based in Hopewell Junction, NY, known for his contributions to semiconductor technology and integrated circuit design. With a total of 23 patents to his name, Jambotkar has made significant strides in the field, particularly in the development of advanced transistor technologies.

Latest Patents

Among his latest innovations are the following patents:

1. **Bipolar Transistor Integrated Circuit Technology**

This integrated circuit bipolar transistor patent describes a configuration where the relative semiconductor electrode areas are established by an electrode pedestal. This includes a base contact positioning feature, allowing for relaxed wiring constraints through a base pedestal that facilitates independent positioning of contact wiring. Notably, this invention features a heterojunction bipolar transistor with a base area less than twice that of the emitter area, paving the way for enhanced performance and effectiveness in integrated circuits.

2. **Process for Fabricating Complementary Vertical Transistor Memory Cell**

Jambotkar's patent on a compact complementary transistor switch memory cell structure utilizes both vertical PNP and vertical NPN transistors in gallium arsenide technology. This innovative design merges the base region of the vertical PNP transistor with the collector region of the vertical NPN transistor. The structure is designed to improve memory density, performance, and wireability in memory arrays, and it outlines a novel yet simple process for creating compact CTS memory cells.

Career Highlights

Chakrapani G Jambotkar is currently associated with International Business Machines Corporation (IBM), where he works on cutting-edge technologies in semiconductor design. His career has been marked by a dedication to innovation, allowing him to establish a strong presence in the patents landscape related to electronic devices and memory technologies.

Collaborations

In his journey of innovation, Jambotkar has collaborated with notable coworkers, including Robert B Renbeck and Paul P Wang. These collaborations have facilitated the sharing of ideas and expertise, contributing to the success of many of his patent filings.

Conclusion

Chakrapani G Jambotkar stands out as a prominent inventor in the domain of integrated circuit technology and memory systems. His work continues to influence advancements in semiconductor technologies, driving the future of electronic devices.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]