Company Filing History:
Years Active: 2017
Title: Céline Pascal: Innovator in Silicon Substrate Technology
Introduction
Céline Pascal is a notable inventor based in Saint Martin d'Uriage, France. He has made significant contributions to the field of materials science, particularly in the development of silicon substrates. His innovative approach has led to advancements that are crucial for various technological applications.
Latest Patents
Céline Pascal holds a patent for a method of preparing a recrystallized silicon substrate with large crystallites. This method involves several key steps, including providing a polycrystalline silicon substrate with an average grain size of less than or equal to 10 micrometers. The process includes subjecting the substrate to overall homogeneous plastic deformation at a temperature of at least 1000°C, followed by localized plastic deformation in specific areas of the substrate. The final step involves recrystallization heat treatment to achieve the desired substrate characteristics.
Career Highlights
Céline Pascal is associated with the Commissariat à l'énergie atomique et aux énergies alternatives, where he has been instrumental in research and development. His work focuses on enhancing the properties of silicon substrates, which are essential for various electronic and photovoltaic applications. His innovative methods have the potential to improve the efficiency and performance of silicon-based technologies.
Collaborations
Céline Pascal has collaborated with esteemed colleagues such as Jean-Marie Lebrun and Jean-Paul Garandet. These collaborations have fostered a productive research environment, leading to significant advancements in their respective fields.
Conclusion
Céline Pascal's contributions to the field of silicon substrate technology exemplify the impact of innovative thinking in materials science. His patented methods are paving the way for future advancements in technology.