Cedrik Y Coia

Title: Innovator Cedrik Y Coia: Pioneering Stabilization in CMOS Device Technology

Introduction: Cedrik Y Coia is an esteemed inventor based in Montreal, Canada, recognized for his notable contributions to semiconductor technology. With a focus on advancing CMOS devices, his innovations have paved the way for improved performance and stability in metal silicide films.

Latest Patents: Cedrik holds a significant patent titled "Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation." This patent reveals a groundbreaking method for forming a stabilized metal silicide film intended for contacts within CMOS devices. The technology involves implanting ions into a silicon-containing layer prior to the formation of metal silicide. The implanted ions effectively stabilize the film by preventing agglomeration during thermal treatments, ensuring that the devices operate reliably at higher temperatures.

Career Highlights: Currently, Cedrik is affiliated with the International Business Machines Corporation (IBM), where he employs his innovative skills to enhance semiconductor technologies. His patent reflects his commitment to excellence in engineering and dedication to pushing the boundaries of existing technologies.

Collaborations: Throughout his career, Cedrik has collaborated with esteemed colleagues, including Roy Arthur Carruthers and Christophe Detavernier. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and strategies essential for innovation in the tech industry.

Conclusion: Cedrik Y Coia stands out as a pivotal figure in the realm of semiconductor technology. His patent not only showcases his inventive capabilities but also contributes significantly to the advancement of CMOS devices. With a strong foundation built on collaboration and innovation, Cedrik continues to inspire others in the field.