Caterina Donato

Title: Caterina Donato: Innovator in Semiconductor Technology

Introduction

Caterina Donato is a prominent inventor based in Aci Catena, Italy. She has made significant contributions to the field of semiconductor technology, particularly through her innovative patent. As a woman in a predominantly male industry, she serves as an inspiration for aspiring female engineers and inventors.

Latest Patents

Caterina Donato holds a patent for a "Method of manufacturing a semiconductor power device." This invention involves forming a trench in a semiconductor body, where the side walls and bottom of the trench are covered with a first dielectric material layer. The trench is then filled with a second dielectric material layer. The first and second dielectric material layers are etched via a partial, simultaneous, and controlled etching process, ensuring that the dielectric materials have similar etching rates. A gate-oxide layer, thinner than the first dielectric material layer, is deposited on the trench walls. A gate region of conductive material is formed within the trench, along with body regions and source regions that are insulated from the gate region. This innovative method enhances the efficiency and performance of semiconductor devices.

Career Highlights

Caterina is currently employed at STMicroelectronics S.r.l., a leading company in semiconductor solutions. Her work at STMicroelectronics has allowed her to collaborate with other talented professionals in the field.

Collaborations

Some of her notable coworkers include Giuseppe Arena and Cateno Marco Camalleri. Their collaborative efforts contribute to the advancement of semiconductor technologies and innovations.

Conclusion

Caterina Donato's contributions to semiconductor technology through her patent demonstrate her expertise and commitment to innovation. Her work not only advances the field but also serves as a beacon for future generations of inventors.