Torrance, CA, United States of America

Cao Jianjun

This inventor holds 1 USPTO granted patent. Top assignee: International Rectifier Corporation. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cao Jianjun. Retrieved from https://idiyas.com/inventor/cao-jianjun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2010

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Cao Jianjun

Introduction

Cao Jianjun is a notable inventor based in Torrance, California. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of power MOSFETs.

Latest Patents

Cao Jianjun holds a patent for a "Short channel trench power MOSFET with low threshold voltage." This innovative device features a lower peak concentration of dopants and a substantially uniform concentration of dopants compared to conventional short channel devices. His patent is a testament to his expertise in semiconductor design and engineering. He has 1 patent to his name.

Career Highlights

Cao Jianjun is currently employed at International Rectifier Corporation, a leading company in power management technology. His role involves research and development, where he applies his knowledge to create advanced semiconductor solutions. His contributions have helped the company maintain its position as a leader in the industry.

Collaborations

Cao Jianjun has worked alongside talented colleagues such as Kyle A. Spring and Devana Cohen. Their collaborative efforts have led to advancements in semiconductor technology and have fostered a productive work environment.

Conclusion

Cao Jianjun's innovative work in the field of power MOSFETs showcases his dedication to advancing semiconductor technology. His contributions are valuable to the industry and highlight the importance of innovation in engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…