C P Chang

Title: C P Chang: Innovator in Metal Gate Capacitor Technology

Introduction

C P Chang is a notable inventor based in Newport Beach, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of metal gate capacitors.

Latest Patents

C P Chang holds 1 patent for his invention titled "Metal gate capacitor fabricated with a silicon gate MOS process." This patent describes a method for creating metal gate MOS capacitors using standard silicon gate processes. The process includes several steps, such as providing a semiconductor substrate, defining active areas and capacitor areas, and forming field oxide regions that surround these areas. Additionally, it involves forming a gate oxide layer, creating polysilicon gates, and establishing highly doped source and drain regions.

Career Highlights

C P Chang has worked at Hughes Aircraft Company, where he has applied his expertise in semiconductor technology. His work has contributed to advancements in the manufacturing processes of electronic components.

Collaborations

C P Chang has collaborated with Joseph E Farb, a fellow innovator in the field. Their partnership has likely fostered innovative ideas and developments in semiconductor technology.

Conclusion

C P Chang's contributions to the field of metal gate capacitors exemplify the importance of innovation in semiconductor technology. His work continues to influence advancements in electronic components and manufacturing processes.