C David Forgerson, Ii

Title: C David Forgerson, II: Innovator in III-V Device Technology

Introduction

C David Forgerson, II is a notable inventor based in Camarillo, CA, who has made significant contributions to the field of semiconductor technology. He holds 2 patents that focus on improving the efficiency and reliability of III-V devices. His work is particularly relevant in the context of modern electronics, where performance and miniaturization are critical.

Latest Patents

One of his latest patents is titled "Gate-to-ohmic metal contact scheme for III-V devices." This invention describes a direct shorting contact structure that comprises a metal layer making ohmic contact with a source and/or drain region and with a gate electrode. The design reduces the area required for such contact and eliminates the need for a second layer of interconnection metallization. The metal layer includes a first layer made from materials such as gold-germanium and nickel-germanium, which ensures good electrical contact. Additionally, a second layer of a thermally stable and electromigration-resistant metal, such as tungsten, provides excellent step coverage, addressing reliability issues found in other metallization schemes.

Career Highlights

C David Forgerson, II is currently employed at Vitesse Semiconductor Corporation, where he continues to innovate in the semiconductor space. His expertise in III-V devices has positioned him as a valuable asset to his company and the industry at large.

Collaborations

He has collaborated with various professionals in his field, including his coworker David A Johnson, to further advance semiconductor technologies.

Conclusion

C David Forgerson, II is a prominent figure in the semiconductor industry, known for his innovative patents that enhance the performance of III-V devices. His contributions are vital for the ongoing evolution of electronic technologies.