Location History:
- Yongin-si, KR (2016 - 2017)
- Yongin, KR (2017)
Company Filing History:
Years Active: 2016-2017
Title: Byung-Kook Ahn: Innovator in Battery Technology
Introduction
Byung-Kook Ahn is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of battery technology, holding a total of 5 patents. His work focuses on enhancing the efficiency and safety of battery packs, which are essential components in various electronic devices.
Latest Patents
One of his latest patents is for a battery pack that includes a protection circuit module for unit batteries. This innovative design features a plurality of unit batteries arranged side by side, each containing a can that accommodates an electrode assembly. The battery pack is designed to ensure that all cap plates are exposed in the same direction, enhancing accessibility and safety. Another notable patent involves a battery pack that comprises multiple battery cells, a protective circuit module (PCM), a temperature sensor, and a case. This design allows for effective temperature measurement and protection of the battery cells, ensuring optimal performance.
Career Highlights
Byung-Kook Ahn is currently employed at Samsung SDI Co., Inc., a leading company in the battery manufacturing industry. His work at Samsung SDI has allowed him to push the boundaries of battery technology, contributing to advancements that benefit a wide range of applications.
Collaborations
Throughout his career, Ahn has collaborated with notable colleagues, including Dae-Yon Moon and Jae-Hyeok Choi. These collaborations have fostered an environment of innovation and creativity, leading to the development of cutting-edge battery solutions.
Conclusion
Byung-Kook Ahn's contributions to battery technology are noteworthy, with several patents that enhance the safety and efficiency of battery packs. His work at Samsung SDI Co., Inc. and collaborations with esteemed colleagues further solidify his position as a leading inventor in this vital field.