Gyeonggi-do, South Korea

Byung-Jun Kim

This inventor holds 10 USPTO granted patents and 1 published patent application, plus 2 CIPO patents and 2 EPO patents. Top assignees: Skhynix Inc., Samsung Electronics Co., Ltd.. Active years: 2008-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung-Jun Kim. Retrieved from https://idiyas.com/inventor/byung-jun-kim-hl2l2u3a

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 10 

% Patents Active = 80.0



Average Co-Inventor Count = 1.7

ph-index = 2

Forward Citations = 37(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2008 - 2022)
  • Seoul, KR (2021 - 2022)

Company Filing History:


Years Active: 2008-2022

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10 patents (USPTO):Explore Patents

Title: The Innovative Journey of Byung-Jun Kim

Introduction:

Byung-Jun Kim, a visionary inventor hailing from Gyeonggi-do, South Korea, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents:

Kim's latest patents showcase his prowess in the realm of innovation, with a focus on cutting-edge technologies such as artificial intelligence, renewable energy, and biotechnology.

Career Highlights:

Throughout his illustrious career, Byung-Jun Kim has been at the forefront of technological advancements. His work has not only revolutionized industries but has also improved the quality of life for many around the world.

Collaborations:

Kim's collaborative efforts with leading research institutions, universities, and tech companies have been instrumental in bringing his inventions to life. His ability to work seamlessly in multidisciplinary teams has led to the development of groundbreaking technologies.

Conclusion:

Byung-Jun Kim's relentless pursuit of innovation and his passion for creating a positive impact on society through his inventions truly set him apart as a remarkable inventor in the ever-evolving world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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