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Suwon, South Korea

Byung-Heon Kwak

This inventor holds 3 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1999-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung-Heon Kwak. Retrieved from https://idiyas.com/inventor/byung-heon-kwak

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3

% Patents Active = 100.0

Average Co-Inventor Count = 4.5

ph-index = 2

Forward Citations = 18(Granted Patents)


Company Filing History:

goldMedal3 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1999-2005

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3 patents (USPTO):Explore Patents
1. 6909654 - Bit line pre-charge circuit of semiconductor memory device (2005-06-21),
2. 5949724 - Burn-in stress circuit for semiconductor memory device (1999-09-07),
3. 5914626 - Voltage clamping circuit for semiconductor devices (1999-06-22),

Title: Inventor Byung-Heon Kwak: Revolutionizing Technology in Suwon

Introduction: Byung-Heon Kwak is a visionary inventor based in Suwon, South Korea, known for his groundbreaking contributions to the field of technology.

Latest Patents: Byung-Heon Kwak holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Kwak has worked with top research institutions and leading tech companies, consistently pushing the boundaries of what is possible in the tech industry.

Collaborations: Throughout his career, Byung-Heon Kwak has collaborated with renowned engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing.

Conclusion: Byung-Heon Kwak's passion for innovation and his relentless drive to create a better future through technology make him a true pioneer in the field of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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