Kyungki-do, South Korea

Byung-chul Ahn

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung-chul Ahn. Retrieved from https://idiyas.com/inventor/byung-chul-ahn-xdmyx312

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: The Innovations of Byung-chul Ahn in Integrated Circuit Technology

Introduction: Byung-chul Ahn, an esteemed inventor based in Kyungki-do, South Korea, has made a significant contribution to the field of integrated circuit technology. With a focus on enhancing the performance of silicon layers in capacitors, Ahn has developed innovative methods that streamline semiconductor manufacturing processes.

Latest Patents: Byung-chul Ahn holds a notable patent titled "Dual source gas methods for forming integrated circuit capacitor." This patented method involves a strategic approach to forming a silicon layer on an integrated circuit substrate using silane and disilane. The technique effectively increases the step coverage and deposition rate of silicon layers while minimizing the variability in deposition rates and reducing local crystallization. Most intriguingly, the process can utilize two distinct source gases: the first being silane for the initial sublayer, and the second being disilane for the subsequent sublayer, or a mixture of both gases can be employed to simplify the manufacturing process.

Career Highlights: Ahn is currently associated with Samsung Electronics Co., Ltd., one of the leading technology companies in the world. His expertise in the semiconductor field has positioned him as a valuable asset within the organization. The advancement brought by his patent is pivotal to enhancing the fabrication techniques used in modern electronic devices.

Collaborations: Throughout his career, Byung-chul Ahn has collaborated with fellow innovators, including Man-sug Kang and Hyun-bo Shin. This collaboration highlights the importance of teamwork in the realm of technological advancements, where diverse insights contribute to the development of groundbreaking solutions.

Conclusion: Byung-chul Ahn's contributions to integrated circuit technology are commendable and reflect the spirit of innovation that drives progress in the semiconductor industry. His patented methods not only enhance the manufacturing capabilities but also pave the way for the future of electronic devices. With continued collaboration and innovation, Ahn and his peers are poised to make further strides in advancing semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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