Plano, TX, United States of America

Byron T Ahlburn

This inventor holds 5 USPTO granted patents and 1 EPO patent. Top assignee: Texas Instruments Corporation. Active years: 1977-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byron T Ahlburn. Retrieved from https://idiyas.com/inventor/byron-t-ahlburn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 2.2

ph-index = 4

Forward Citations = 69(Granted Patents)


Location History:

  • Dallas, TX (US) (1977 - 1997)
  • Plano, TX (US) (1997 - 2001)

Company Filing History:


Years Active: 1977-2001

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5 patents (USPTO):Explore Patents

Title: Byron T Ahlburn: Innovator in Semiconductor Technology

Introduction

Byron T Ahlburn is a notable inventor based in Plano, TX, who has made significant contributions to the field of semiconductor technology. With a total of 5 patents to his name, Ahlburn has developed innovative methods that enhance the efficiency and effectiveness of semiconductor devices.

Latest Patents

One of Ahlburn's latest patents is a method for trench isolation of semiconductor devices. This method involves removing excess oxide from active areas after shallow trench isolation without the use of chemical-mechanical polishing. A nitride mask is utilized to protect active areas during the etching of isolation trenches. The trenches are filled with oxide using high-density plasma deposition, which simultaneously etches, providing a sloping contour around the isolation trenches. A further layer of nitride is applied to cap the trench, sealing it to the underlying layer of nitride. This cap layer receives a patterned etch to remove the cap only over the active areas, allowing for a selective etch to remove the excess oxide, which can be followed by a selective etch to remove the nitride layers.

Another significant patent is for a composite dielectric passivation of high-density circuits. This composite dielectric film is designed for the final passivation of an integrated circuit. The process begins with the deposition of plasma-enhanced TEOS oxide to a thickness of 2000 Å, followed by thermal O3-TEOS oxide to a thickness of 8000 Å, and concludes with silicon nitride to a thickness of 10,000 Å.

Career Highlights

Byron T Ahlburn is currently employed at Texas Instruments Corporation, where he continues to innovate and contribute to advancements in semiconductor technology. His work has been instrumental in developing methods that improve the performance and reliability of semiconductor devices.

Collaborations

Ahlburn has collaborated with notable colleagues, including Don L Kendall and Klaus C Wiemer, who have also made significant contributions to the field.

Conclusion

Byron T Ahlburn's innovative work in semiconductor technology has led to the development of several important patents that enhance the efficiency of semiconductor devices. His contributions continue to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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