Company Filing History:
Years Active: 2018
Title: Byoungchan Oh: Innovator in Memory Device Technology
Introduction
Byoungchan Oh is a notable inventor based in Ann Arbor, Michigan. He has made significant contributions to the field of integrated circuits, particularly in memory device technology. His innovative approach has led to the development of a unique patent that enhances memory retention capabilities.
Latest Patents
Byoungchan Oh holds a patent for an "Enhanced Memory Device." This invention describes various implementations directed to an integrated circuit. The integrated circuit includes a memory cell that operates in multiple retention states, including both static and dynamic retention states. Additionally, the integrated circuit features a controller that selectively applies different voltage levels to the memory cell based on its retention state.
Career Highlights
Byoungchan Oh is affiliated with the University of Michigan, where he continues to advance his research and development in memory technology. His work has garnered attention for its potential applications in various electronic devices.
Collaborations
He has collaborated with notable colleagues, including Sandunmalee Nilmini Abeyratne and Ronald George Dreslinski, Jr. These partnerships have contributed to the advancement of his research and the successful development of his patent.
Conclusion
Byoungchan Oh's contributions to memory device technology exemplify the innovative spirit of modern inventors. His work at the University of Michigan and his patented technology are paving the way for advancements in integrated circuits.
Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.