The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Mar. 25, 2016
Applicant:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Inventors:
Byoungchan Oh, Ann Arbor, MI (US);
Sandunmalee Abeyratne, Ann Arbor, MI (US);
Ronald G. Dreslinski, Jr., Ann Arbor, MI (US);
Trevor Mudge, Ann Arbor, MI (US);
Assignee:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/406 (2006.01); G11C 11/4074 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40618 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); G11C 7/12 (2013.01);
Abstract
Various implementations described herein are directed to an integrated circuit. The integrated circuit may include a memory cell configured to operate in multiple retention states including a static retention state and a dynamic retention state. The integrated circuit may include a controller configured to selectively apply different voltage levels to the memory cell based on the retention state of the memory cell.