Hwaseong, South Korea

Byoung Yull Yang

This inventor holds 20 USPTO granted patents and 3 published patent applications and 11 EPO patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2006-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byoung Yull Yang. Retrieved from https://idiyas.com/inventor/byoung-yull-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 60.0

 

Average Co-Inventor Count = 6.3

ph-index = 8

Forward Citations = 181(Granted Patents)


Location History:

  • Ansan, KR (2006 - 2008)
  • Ansan-Si, KR (2007 - 2012)
  • Suwon-si, KR (2012)
  • Hwaseong-si, KR (2012 - 2016)

Company Filing History:


Years Active: 2006-2016

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20 patents (USPTO):Explore Patents

Title: The Innovative Journey of Byoung Yull Yang

Introduction: Byoung Yull Yang, a distinguished inventor hailing from Hwaseong-si, South Korea, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Yang's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar panels with increased efficiency and durability.

Career Highlights: With a career spanning over two decades, Yang has worked tirelessly to push the boundaries of technological innovation. His work has not only earned him recognition in his home country but also on the global stage.

Collaborations: Throughout his career, Yang has collaborated with leading research institutions and tech companies to bring his inventions to life. His ability to work in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Byoung Yull Yang's passion for innovation and his dedication to creating a sustainable future through technology make him a true pioneer in the field of inventing. His work continues to inspire the next generation of inventors worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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