Company Filing History:
Years Active: 2019-2020
Title: Byoung Taek Kim: Innovator in Vertical Memory Devices
Introduction
Byoung Taek Kim is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 2 patents. His work focuses on innovative designs that enhance the performance and efficiency of memory technology.
Latest Patents
Among his latest patents is a vertical memory device featuring an epitaxial layer in contact with a channel layer. This invention includes gate electrode layers stacked on a substrate, a channel layer that penetrates through these layers, and a first epitaxial layer that contacts the lower portion of the channel layer. This design aims to improve the functionality and reliability of memory devices. Another notable patent is a memory device that comprises a memory cell array, including a first switch cell, a second switch cell, and multiple memory cells positioned between them. This device is designed to perform program operations efficiently by managing voltages across various word lines.
Career Highlights
Byoung Taek Kim is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role involves developing advanced memory solutions that are crucial for modern computing and electronic devices.
Collaborations
He collaborates with talented coworkers, including Yong Kim and Sun Gyung Hwang, who contribute to the innovative projects at Samsung Electronics.
Conclusion
Byoung Taek Kim's contributions to vertical memory devices exemplify the importance of innovation in technology. His patents reflect a commitment to advancing memory technology, which is essential for the future of electronics.