Gyeonggi-do, South Korea

Byoung Kuk You


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Byoung Kuk You: Innovator in Phase-Change Memory Technology

Introduction

Byoung Kuk You is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative work on phase-change memory technology. His research focuses on enhancing the performance and flexibility of memory devices, which are crucial for modern electronic applications.

Latest Patents

Byoung Kuk You holds 1 patent for his invention titled "Phase-change memory device and flexible phase-change memory device insulating nano-dot." This patent describes a phase-change memory device that utilizes insulating nanoparticles to improve functionality. The device includes an electrode and a phase-change layer that undergoes a phase change based on heat generated from the electrode. The incorporation of insulating nanoparticles formed from a self-assembled block copolymer enhances the crystallization and amorphization processes within the memory device.

Career Highlights

Byoung Kuk You is affiliated with the Korea Advanced Institute of Science and Technology, where he conducts research and development in advanced memory technologies. His work has positioned him as a key figure in the field, contributing to the advancement of flexible memory solutions that meet the demands of modern electronics.

Collaborations

He has collaborated with notable colleagues, including Yeon Sik Jung and Keon Jae Lee, who share his passion for innovation in memory technology. Their combined expertise fosters a collaborative environment that drives forward-thinking research and development.

Conclusion

Byoung Kuk You's contributions to phase-change memory technology exemplify the innovative spirit of modern inventors. His work not only advances the field but also paves the way for future developments in flexible memory devices.

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