The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Feb. 21, 2012
Yeon Sik Jung, Daejeon, KR;
Keon Jae Lee, Daejeon, KR;
Jae Won Jeong, Daejeon, KR;
Jae Suk Choi, Chungcheongnam-do, KR;
Geon Tae Hwang, Busan, KR;
Beom Ho Mun, Busan, KR;
Byoung Kuk You, Gyeonggi-do, KR;
Seung Jun Kim, Daejeon, KR;
Yeon Sik Jung, Daejeon, KR;
Keon Jae Lee, Daejeon, KR;
Jae Won Jeong, Daejeon, KR;
Jae Suk Choi, Chungcheongnam-do, KR;
Geon Tae Hwang, Busan, KR;
Beom Ho Mun, Busan, KR;
Byoung Kuk You, Gyeonggi-do, KR;
Seung Jun Kim, Daejeon, KR;
Korea Advanced Institute of Science and Technology (KAIST), Yuseong-Gu, Daejeon, KR;
Abstract
Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from the electrode, wherein insulating nanoparticles formed from a self-assembled block copolymer are provided between the electrode and the phase-change layer undergoing crystallization and amorphization.