This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Byoung Jae Bae and His Magnetic Memory Device Patent.
Introduction
Byoung Jae Bae is an inventor associated with Suwon, South Korea. His patent work includes an invention concerning magnetic memory devices and their fabrication.
Latest Patents
Bae is credited with 1 patent: “Magnetic Memory Device and Method for Fabricating the Same.” The patent describes a memory cell built from a first magnetic pattern, a tunnel barrier pattern, and a second magnetic pattern, stacked on an insulating layer over a substrate. It also describes a re-deposition insertion layer extending from the side of the memory cell along the insulating layer. This insertion layer contains a re-deposition insulating layer, a mixed layer, and a re-deposition byproduct layer. The mixed layer combines materials from the insulating and byproduct layers.
Career Highlights
Bae is associated with Samsung Electronics Ltd. His patent focuses on the structure and fabrication of magnetic memory devices.
Collaborations
Jun Ho Park is identified as Bae’s coworker. The available information does not specify their roles in the patent or whether they collaborated on this invention.
Conclusion
Byoung Jae Bae’s recorded patent addresses the design and fabrication of a magnetic memory device, including a layered structure intended to manage re-deposition byproducts.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
