Burton J Masters is a notable inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of silicon integrated circuits, holding a total of 3 patents. His work focuses on improving the performance and reliability of semiconductor materials.

Latest Patents

Among his latest patents is a method for forming N conductivity-type regions in a silicon substrate. This involves ion implanting arsenic to create a region with an arsenic atom concentration of at least 1 × 10⁻² As atoms per total atoms in the substrate. Additionally, he has developed techniques to minimize atomic misfit dislocations by implanting germanium into the substrate region. These innovations are crucial for enhancing the structural integrity of silicon-based devices.

Career Highlights

Burton J Masters is associated with the International Business Machines Corporation (IBM), where he has contributed to various research and development projects. His expertise in semiconductor technology has positioned him as a key player in the advancement of integrated circuits.

Collaborations

Throughout his career, he has collaborated with esteemed colleagues such as Siegfried R Mader and H Bernhard Pogge. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Burton J Masters continues to be a significant figure in the field of semiconductor technology, with his patents reflecting his commitment to innovation. His work at IBM and collaborations with other experts highlight the importance of teamwork in driving technological advancements.