This inventor holds 1 USPTO granted patent. Top assignee: Hynix Semiconductor Inc.. Active years: 2003.
Company Filing History:
Years Active: 2003
Title: Innovations of Bum-Jin Jun in Semiconductor Technology
Introduction
Bum-Jin Jun is a notable inventor based in Kyoungki-do, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative methods have paved the way for advancements in the fabrication of semiconductor devices.
Latest Patents
Bum-Jin Jun holds 1 patent for a method of fabricating a gate of a semiconductor device. This patent discloses a comprehensive process that includes the sequential formation of a gate oxide layer, a gate material layer, and a mask oxide layer on a semiconductor substrate. The method involves coating a photopolymer with a compound accelerator that absorbs HF vapor and ionizes at a predetermined high temperature. The process continues with exposing the photopolymer, cross-linking the exposed portions, and performing a DFVP process to develop the photopolymer and etch the mask oxide layer simultaneously. The final steps include removing the residual photopolymer and etching the gate material layer and gate oxide layer using the etched mask oxide layer.
Career Highlights
Bum-Jin Jun is currently employed at Hynix Semiconductor Inc., where he continues to innovate in semiconductor technology. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor fabrication processes.
Collaborations
Bum-Jin Jun collaborates with fellow inventor Sung-Yoon Cho, contributing to the advancement of semiconductor technologies through their combined expertise.
Conclusion
Bum-Jin Jun's contributions to semiconductor technology exemplify the importance of innovation in this rapidly evolving field. His patented methods are a testament to his expertise and commitment to advancing technology.