Hwaseong, South Korea

Bum Hyun An

This inventor holds 1 USPTO granted patent. Top assignees: Fine Semitech Corp., Samsung Electronics Co., Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bum Hyun An. Retrieved from https://idiyas.com/inventor/bum-hyun-an-02y4622k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Bum Hyun An: Innovator in Pellicle Frame Technology

Introduction

Bum Hyun An is a notable inventor based in Hwaseong, South Korea. He has made significant contributions to the field of technology, particularly in the fabrication of pellicle frames. His innovative approach has led to the development of a unique method that incorporates various materials.

Latest Patents

Bum Hyun An holds a patent for a "Method of fabricating a pellicle frame." This invention includes the use of aluminum, aluminum oxide, and a transition metal, showcasing his expertise in material science and engineering. The patent reflects his commitment to advancing technology in the semiconductor industry.

Career Highlights

Throughout his career, Bum Hyun An has worked with prominent companies such as Samsung Electronics Co., Ltd. and Fine Semitech Corp. His experience in these leading organizations has allowed him to refine his skills and contribute to groundbreaking projects in the tech sector.

Collaborations

Bum Hyun An has collaborated with talented individuals in his field, including Han Shin Lee and Jeong Jin Kim. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Bum Hyun An's contributions to the field of pellicle frame technology highlight his role as an influential inventor. His work continues to impact the semiconductor industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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