Delano, MN, United States of America

Bryan C Westberg

This inventor holds 2 USPTO granted patents. Top assignee: Honeywell International Inc.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bryan C Westberg. Retrieved from https://idiyas.com/inventor/bryan-c-westberg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2018-2026

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2 patents (USPTO):Explore Patents

Title: The Innovations of Bryan C. Westberg

Introduction

Bryan C. Westberg is a notable inventor based in Delano, MN (US). He has made significant contributions to the field of memory technology, particularly with his work on magnetoresistive random access memory (MRAM). His innovative approach has led to advancements that could impact various applications in electronics.

Latest Patents

Westberg holds a patent for a magnetoresistive random access memory (MRAM) die that includes a magnetic field sensing structure. This MRAM die features a plurality of MRAM cells and a magnetic field sensing structure that comprises a movable portion and a magnetic material attached to it. The movable portion is designed to respond to external magnetic fields, showcasing the potential for enhanced memory performance.

Career Highlights

Westberg is currently employed at Honeywell International Inc., where he continues to develop cutting-edge technologies. His work at Honeywell has allowed him to collaborate with other talented professionals in the field, furthering innovation in memory technology.

Collaborations

One of his notable coworkers is Romney R. Katti, with whom he has likely shared insights and expertise in their respective projects.

Conclusion

Bryan C. Westberg's contributions to the field of MRAM technology exemplify the spirit of innovation. His patent and ongoing work at Honeywell International Inc. highlight his role as a key player in advancing memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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