Bruce T Holden

Title: Innovations by Bruce T. Holden in GaN HEMT Technology

Introduction

Bruce T. Holden, an accomplished inventor based in Torrance, California, has made significant contributions to the field of semiconductor technology. With a total of two patents, his work primarily focuses on gate metallization methods for advanced field effect transistors, enhancing their efficiency and functionality.

Latest Patents

Holden's latest patents specialize in innovative gate metallization methods designed for self-aligned sidewall gate Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). The first patent outlines a method for fabricating a gate structure that includes forming a gate of a first dielectric, creating sidewalls of a second dielectric, selectively etching a buffer layer to create a mesa, and depositing a dielectric layer. The process is meticulously designed to ensure that a top of the gate, the tops of the sidewalls, and the dielectric layer over the mesa are on the same planarized surface. Ultimately, the method allows for metal deposition, annealing to form a metal silicided gate, and precise etching to remove any excess non-silicided metal. The second patent similarly utilizes silicon for forming a gate but features variations in the materials used for sidewalls and the layer deposited over the mesa, showcasing Holden's versatility and innovative approach in semiconductor fabrication.

Career Highlights

Bruce T. Holden is currently affiliated with HRL Laboratories, LLC, where he continues to drive research and development in semiconductor technology. His expertise in gate metallization methods has garnered attention within the industry, leading to advancements in the performance of GaN HEMTs and their applications in modern electronics.

Collaborations

During his career, Holden has collaborated with notable colleagues such as Dean C. Regan and Keisuke Shinohara. Together, they have contributed to pioneering research in semiconductor technologies, further advancing the field and enhancing the capabilities of HEMTs.

Conclusion

In summary, Bruce T. Holden stands out as an innovative inventor whose work in gate metallization methods for GaN HEMTs has distinctly influenced the semiconductor industry. Through his patents and collaborative efforts at HRL Laboratories, he continues to pave the way for future technological advancements in electronics.