Van Nuys, CA, United States of America

Bruce A Kaufman

This inventor holds 1 USPTO granted patent. Top assignee: Halliburton Company. Active years: 1987.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 1987

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1 patent (USPTO):Explore Patents

Title: Bruce A Kaufman: Innovator in Magnetic Core Memory Testing

Introduction

Bruce A Kaufman is a notable inventor based in Van Nuys, California. He has made significant contributions to the field of memory technology, particularly with his innovative methods for testing magnetic core memory. His work has implications for improving the reliability and functionality of memory systems.

Latest Patents

Kaufman holds a patent for a "Method of testing and addressing a magnetic core memory." This method involves writing a test bit to each storage location addressed by each X-drive/X-sink transistor pair and each Y-drive/Y-sink transistor pair. The process determines which transistors are inoperable, creating a memory status map that designates these transistors. The map contents are then converted into an address field for matching against selected memory addresses. If an inoperable transistor is detected, the address is changed to ensure only operable transistors are accessed. This innovative approach enhances the efficiency of memory testing.

Career Highlights

Kaufman is associated with Halliburton Company, where he applies his expertise in memory technology. His work at Halliburton reflects his commitment to advancing technological solutions in the industry.

Collaborations

Kaufman has collaborated with notable colleagues, including Stephen E Tilghman and Richard L Duncan. Their combined efforts contribute to the development of innovative solutions in their respective fields.

Conclusion

Bruce A Kaufman is a distinguished inventor whose work in magnetic core memory testing has made a significant impact on technology. His innovative methods and collaborations continue to influence advancements in memory systems.

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