Brian S Poarch

Title: Brian S. Poarch: Innovator in MEMS Technology

Introduction

Brian S. Poarch is a notable inventor based in Frisco, TX (US). He has made significant contributions to the field of microelectromechanical systems (MEMS). His innovative approach has led to the development of a unique patent that enhances the manufacturing process of MEMS devices.

Latest Patents

Brian S. Poarch holds a patent for a "Method for varied topographic MEMS cap process." This invention involves a device that includes sidewalls formed in a wafer surface, where the sidewalls descend to a recessed surface. The recessed surface promotes resist coverage on the wafer surface, including corners, which are critical in various surface topographies. The patent outlines a wet etching procedure used to form the sidewalls and recessed surface. A resist material, such as a photoresist, is deposited onto the wafer surface, ensuring full coverage of the top corners. This innovative method is designed to improve the resist coverage on the top surface of the wafer, particularly adjacent to trenches formed in the wafer.

Career Highlights

Brian is currently employed at Maxim Integrated Products, Inc., where he continues to push the boundaries of MEMS technology. His work has been instrumental in advancing the capabilities of MEMS devices, making them more efficient and effective in various applications.

Collaborations

Throughout his career, Brian has collaborated with talented individuals such as Xuejun Ying and Li Li. These collaborations have fostered an environment of innovation and creativity, leading to advancements in MEMS technology.

Conclusion

Brian S. Poarch is a distinguished inventor whose contributions to MEMS technology have made a significant impact in the field. His innovative patent and collaborative efforts continue to drive advancements in this critical area of technology.