San Jose, CA, United States of America

Brian Harms

This inventor holds 2 USPTO granted patents and 3 EPO patents. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Brian Harms. Retrieved from https://idiyas.com/inventor/brian-harms-8yqf917e

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.4

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: The Innovations of Brian Harms

Introduction

Brian Harms is an accomplished inventor based in San Jose, California. He is currently associated with Samsung Electronics Co., Ltd., a leading technology company known for its innovative products. Despite having no patents to his name, Harms has made significant contributions to the field of technology through his work and collaborations.

Latest Patents

As of now, Brian Harms holds 2 patents. This may reflect his focus on collaborative projects and contributions within his company rather than individual patent filings.

Career Highlights

Throughout his career, Harms has been involved in various projects that showcase his expertise in technology and innovation. His role at Samsung Electronics Co., Ltd. has allowed him to work on cutting-edge technologies that have the potential to shape the future of consumer electronics.

Collaborations

Brian Harms has worked closely with his coworker, Ayesha Mudassir Khwaja. Their collaboration has likely led to innovative ideas and solutions within their projects at Samsung.

Conclusion

In summary, Brian Harms is a notable figure in the technology sector, contributing to advancements at Samsung Electronics Co., Ltd. His collaborative spirit and dedication to innovation highlight the importance of teamwork in achieving technological breakthroughs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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