Bret R Humphries

Title: Bret R Humphries: Innovator in Conductive Layered Structures

Introduction

Bret R Humphries is a notable inventor based in Clarence Center, NY (US). He has made significant contributions to the field of conductive materials, particularly through his innovative patent. His work is characterized by a focus on layered structures that enhance the functionality of devices.

Latest Patents

Humphries holds a patent for a "Conductive layered structure and methods of making same." This invention describes a device that includes a transparent or semitransparent substrate with at least one layered structure on its surface. The layered structure consists of a first ITO layer on the substrate, a silicon dioxide layer on the first ITO layer, and a second ITO layer on the silicon dioxide layer. Notably, the silicon dioxide layer features an edge that is offset inwardly from the edges of the ITO layers. The patent outlines methods for creating this device, showcasing Humphries' innovative approach to material design.

Career Highlights

Bret R Humphries is associated with 3M Innovative Properties Company, where he continues to develop and refine his inventions. His work at 3M has allowed him to collaborate with other talented professionals in the field, contributing to advancements in technology and materials science.

Collaborations

One of his notable coworkers is Muthu Sebastian, with whom he has likely shared insights and expertise in their respective projects. Their collaboration exemplifies the teamwork often necessary for successful innovation.

Conclusion

Bret R Humphries is a distinguished inventor whose work in conductive layered structures has the potential to impact various technological applications. His patent reflects a commitment to innovation and excellence in material science.