Brent Raymond Doyle is a notable inventor based in Malabar, FL (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of radiation-hardened devices. With a total of 6 patents to his name, Doyle's work has had a considerable impact on the industry.

Latest Patents

Doyle's latest patents include a method for fabricating a radiation-hardened device. This innovative 'tabbed' MOS device provides radiation hardness while supporting reduced gate width requirements. The design incorporates a body tie ring, which effectively reduces field threshold leakage. In one implementation, the width of the tab is based on at least a channel length of the MOS device. This design ensures that a radiation-induced parasitic conduction path between the source and drain region of the device has a resistance that is higher than the device channel resistance.

Career Highlights

Brent Raymond Doyle is currently employed at Intersil Americas Inc., where he continues to push the boundaries of technology. His work focuses on enhancing the performance and reliability of electronic devices in radiation-prone environments.

Collaborations

Doyle has collaborated with several talented individuals in his field, including James Winthrop Swonger and Stephen Joseph Gaul. These collaborations have contributed to the advancement of innovative solutions in semiconductor technology.

Conclusion

Brent Raymond Doyle's contributions to the field of semiconductor technology are noteworthy. His innovative patents and collaborations reflect his commitment to advancing technology in challenging environments. His work continues to influence the industry and inspire future innovations.

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