The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2010

Filed:

Feb. 18, 2009
Applicants:

Stephen Joseph Gaul, Melbourne Village, FL (US);

Michael D. Church, Sebastian, FL (US);

Brent R. Doyle, Malabar, FL (US);

Inventors:

Stephen Joseph Gaul, Melbourne Village, FL (US);

Michael D. Church, Sebastian, FL (US);

Brent R. Doyle, Malabar, FL (US);

Assignee:

Intersil Americas, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

A 'tabbed' MOS device provides radiation hardness while supporting reduced gate width requirements. The 'tabbed' MOS device also utilizes a body tie ring, which reduces field threshold leakage. In one implementation the “tabbed” MOS device is designed such that a width of the tab is based on at least a channel length of the MOS device such that a radiation-induced parasitic conduction path between the source and drain region of the device has a resistance that is higher than the device channel resistance.


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