Company Filing History:
Years Active: 2022
Title: Breandán Pol Og ÓhAnnaidh: Innovator in Bipolar Junction Transistor Technology
Introduction
Breandán Pol Og ÓhAnnaidh is a notable inventor based in Auburn Hills, MI (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar junction transistors. His innovative approach has led to advancements that enhance the performance of these critical electronic components.
Latest Patents
Breandán holds a patent for a bipolar junction transistor and a method of forming a collector for such a transistor. This invention features a multilayer collector structure where the layers are individually grown in separate epitaxial growth stages. For PNP transistors, each layer is doped with a p-type dopant in a dedicated implant stage. This method allows for better control of the dopant concentration profile in the collector region, optimizing the speed and breakdown voltage of the bipolar junction transistor. He has 1 patent to his name.
Career Highlights
Breandán is currently employed at Analog Devices International Unlimited Company, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing more efficient and reliable electronic components that are essential in various applications.
Collaborations
Throughout his career, Breandán has collaborated with esteemed colleagues such as Edward John Coyne and Alan Brannick. These partnerships have fostered an environment of innovation and creativity, leading to significant advancements in their field.
Conclusion
Breandán Pol Og ÓhAnnaidh is a distinguished inventor whose work in bipolar junction transistor technology has made a lasting impact on the electronics industry. His innovative methods and collaborative spirit continue to drive advancements in semiconductor technology.