The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Oct. 01, 2019
Analog Devices International Unlimited Company, Limerick, IE;
Edward John Coyne, Athenry, IE;
Alan Brannick, Raheen, IE;
Shane Tooher, Kilmallock, IE;
Breandán Pol Og ÓhAnnaidh, Raheen, IE;
Catriona Marie O'Sullivan, Kilcornan, IE;
Shane Patrick Geary, Sixmilebridge, IE;
Analog Devices International Unlimited Company, Limerick, IE;
Abstract
A bipolar junction transistor is provided with a multilayer collector structure. The layers of the collector are individually grown in separate epitaxial growth stages. For a PNP transistor, each layer, after it is grown, is doped with a p-type dopant in a dedicated implant stage. By providing separate epitaxial growth stages and separate dopant implant stages for each layer of the collector, the dopant concentration profile in the collector region can be better controlled to optimize the speed and breakdown voltage of a bipolar junction transistor.