Brad D Cantos

Title: Brad D Cantos: Innovator in Microwave Technology

Introduction

Brad D Cantos is a notable inventor based in San Francisco, CA. He has made significant contributions to the field of microwave technology, particularly through his innovative patent. His work focuses on enhancing the performance and efficiency of microwave field-effect transistors.

Latest Patents

Cantos holds a patent titled "Method of fabricating microwave FET having gate with submicron length." This patent discloses a method for forming a uniform length gate electrode and contact for a microwave field-effect transistor, where the gate electrode measures less than one micron in length. The process involves creating a photoresist plug on a first photoresist layer, which acts as a shadow mask during the deposition of a plasma-etch-resistant material, specifically aluminum. Following this, a third photoresist layer is applied to facilitate the formation of a contact region on the semiconductor substrate. The method concludes with the removal of the photoresist material, leaving the gate electrode and contact on the substrate surface.

Career Highlights

Cantos is currently employed at Watkins-Johnson Company, where he continues to develop innovative solutions in microwave technology. His expertise in semiconductor fabrication has positioned him as a valuable asset in his field.

Collaborations

Cantos has collaborated with Walter A Strifler, further enhancing the innovative capabilities within their projects.

Conclusion

Brad D Cantos is a prominent figure in the microwave technology sector, with a patent that showcases his innovative approach to semiconductor fabrication. His contributions continue to influence advancements in the field.