Bow-Wen Chan

Title: Bow-Wen Chan: Innovator in Semiconductor Technology

Introduction

Bow-Wen Chan is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced MOSFET devices. His innovative approach has led to the creation of a unique patent that enhances the performance and reliability of these devices.

Latest Patents

Bow-Wen Chan holds a patent for a "Recessed polysilicon gate structure for a strained silicon MOSFET device." This patent describes a method of forming a channel region for a MOSFET device in a strained silicon layer. The method employs adjacent and surrounding silicon-germanium shapes to create a more efficient channel region. The process features the simultaneous formation of recesses in both the conductive gate structure and the semiconductor substrate. This innovative approach reduces the risk of silicon-germanium bridging during the epitaxial growth of the alloy layer, thereby minimizing the chances of gate-to-substrate leakage or shorts.

Career Highlights

Bow-Wen Chan is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on enhancing the performance of MOSFET devices through innovative design and engineering solutions. His contributions have been instrumental in advancing semiconductor technology.

Collaborations

Throughout his career, Bow-Wen Chan has collaborated with notable colleagues, including Yi-Chun Huang and Baw-Ching Perng. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Bow-Wen Chan's work in semiconductor technology exemplifies the spirit of innovation. His patented methods for improving MOSFET devices demonstrate his commitment to advancing the field. His contributions will undoubtedly have a lasting impact on the semiconductor industry.