Brooklyn, NY, United States of America

Boris Kharas

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Novatronix Corporation. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Boris Kharas. Retrieved from https://idiyas.com/inventor/boris-kharas-ad9saiso

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Innovations by Boris Kharas

Introduction

Boris Kharas is an accomplished inventor based in Brooklyn, NY. He has made significant contributions to the field of technology, particularly in the area of materials science. His innovative work focuses on controlling the index of refraction in amorphous silicon-based films.

Latest Patents

Boris Kharas holds a patent for an apparatus, device, system, and method for controlling the index of refraction of at least one layer of amorphous silicon-based film deposited on a substrate. This patent involves providing at least one volume of nitrogen (N), silane (SiH), and helium (He), and depositing the amorphous silicon-based film on the substrate through vapor deposition. The device may also include a waveguide that incorporates at least one layer of the amorphous silicon-based film, which is deposited using the specified gases.

Career Highlights

Boris Kharas is associated with Novatronix Corporation, where he applies his expertise in developing advanced technologies. His work has been instrumental in enhancing the performance of optical devices through innovative material applications.

Collaborations

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Conclusion

Boris Kharas is a notable inventor whose work in controlling the index of refraction in silicon-based films has the potential to impact various technological applications. His contributions continue to advance the field of materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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