Macungie, PA, United States of America

Bora M Onat


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2002-2004

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2 patents (USPTO):Explore Patents

Title: Bora M Onat: Innovator in Semiconductor Technology

Introduction

Bora M Onat is a notable inventor based in Macungie, PA (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device fabrication.

Latest Patents

His latest patents include a semiconductor device and method of fabrication. This invention features a semiconductor substrate with an active region and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is created over the low dielectric constant layer through low temperature deposition techniques, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. This metal layer can be patterned to create a bond pad, which may be positioned away from the active region. Wire bonds can be made on the bond pad using ultrasonic energy. Another patent focuses on semiconductor devices that utilize low K dielectrics, employing similar methods of fabrication.

Career Highlights

Bora M Onat has worked with prominent companies in the semiconductor industry, including Agere Systems Inc. and Agere Systems Guardian Corporation. His experience in these organizations has contributed to his expertise in semiconductor device development.

Collaborations

Throughout his career, Bora has collaborated with talented individuals such as Utpal Kumar Chakrabarti and Kevin Cyrus Robinson. These collaborations have likely enriched his work and led to innovative advancements in semiconductor technology.

Conclusion

Bora M Onat is a distinguished inventor whose work in semiconductor technology has led to valuable patents and advancements in the field. His contributions continue to influence the development of innovative semiconductor devices.

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