The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2002

Filed:

Jan. 18, 2000
Applicant:
Inventors:

Utpal Kumar Chakrabarti, Allentown, PA (US);

Bora M Onat, Macungie, PA (US);

Kevin Cyrus Robinson, Upper Milford Township, Lehigh County, PA (US);

Biswanath Roy, Bethlehem, PA (US);

Ping Wu, Warren, NJ (US);

Assignee:

Agere Systems Guardian Corp, Orlando, FL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/358 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/358 ; H01L 2/348 ;
Abstract

The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.


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