Hong Kong, China

Boon-Meng Chan

This inventor holds 1 USPTO granted patent. Top assignee: Kras Asia Ltd.. Active years: 1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Boon-Meng Chan. Retrieved from https://idiyas.com/inventor/boon-meng-chan-2xror1ov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: Boon-Meng Chan: Innovator in Semiconductor Manufacturing

Introduction

Boon-Meng Chan is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent that addresses common challenges in the industry.

Latest Patents

His most recent patent is titled "Method for use in the manufacture of semiconductor devices and apparatus." This invention focuses on correcting distortions of electrical leads projecting from an integrated circuit chip simultaneously, rather than in sequence. This approach prevents a corrected distortion from reappearing. Additionally, his method utilizes electrically conductive plastic tools instead of traditional steel tools, which greatly reduces the cost of manufacture and handling.

Career Highlights

Boon-Meng Chan has established himself as a key figure in the semiconductor industry. His work at Kras Asia Ltd. has allowed him to implement his innovative ideas and contribute to advancements in manufacturing processes.

Collaborations

Throughout his career, Chan has collaborated with notable colleagues, including Lawrence L Plummer, Jr. and See-Lian Gan. These partnerships have further enhanced his contributions to the field.

Conclusion

Boon-Meng Chan's innovative approach to semiconductor manufacturing exemplifies the impact of creativity and collaboration in technology. His patent not only addresses critical issues in the industry but also paves the way for more cost-effective manufacturing solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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