Yongin-si, South Korea

Bongsung Seo

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Display Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bongsung Seo. Retrieved from https://idiyas.com/inventor/bongsung-seo-zxffbwo3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Bongsung Seo: Inventor in Display Technology.

Introduction

Bongsung Seo is an inventor associated with Yongin-si, South Korea, and Samsung Display Co., Ltd. His listed patent portfolio includes 1 patent, concerning a display apparatus and its conductive layers.

Latest Patents

Seo’s listed patent is “Display Apparatus Including Conductive Layer Having Through-Pattern.” It describes a display apparatus with a substrate, pixel electrodes, emission layers, and a single-body opposite electrode. A thin first passivation layer sits on the opposite electrode, while a conductive layer above it includes a through-pattern of a preset shape. The passivation layer’s thickness is specified as less than the wavelength of visible light generated by the emission layer.

Career Highlights

The available information associates Seo with Samsung Display Co., Ltd. and identifies his work in display apparatus technology. The patent describes a layered display structure that incorporates a patterned conductive layer.

Collaborations

Seo’s listed coworkers include Younggu Kim and Sunghan Kim. Their names are provided as collaborators, though the available details do not specify their individual contributions to the patent.

Conclusion

Bongsung Seo’s listed invention focuses on the structure of a display apparatus, particularly its passivation and patterned conductive layers, and is associated with Samsung Display Co., Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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