Shenzhen, China

Boming Feng

This inventor holds 2 USPTO granted patents. Top assignee: Shenzhen Sunselection Technology Co., Ltd.. Active years: 2023-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Boming Feng. Retrieved from https://idiyas.com/inventor/boming-feng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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2 patents (USPTO):Explore Patents

Title: Boming Feng: Innovator in Hair Dryer Technology

Introduction

Boming Feng is a notable inventor based in Shenzhen, China. He has made significant contributions to the field of consumer electronics, particularly in the development of hair dryer technology. With a total of 2 patents to his name, Feng continues to push the boundaries of innovation in his industry.

Latest Patents

One of Boming Feng's latest patents is a cutting-edge hair dryer. This invention showcases his commitment to enhancing user experience and efficiency in personal care appliances. His work in this area reflects a deep understanding of both technology and consumer needs.

Career Highlights

Feng is currently employed at Shenzhen Sunselection Technology Co., Ltd., where he applies his expertise to develop innovative products. His role at the company allows him to collaborate with other talented professionals in the field, further advancing the company's mission to deliver high-quality consumer electronics.

Collaborations

Some of Boming Feng's coworkers include Xiu Sun and Shilin Liang. Together, they form a dynamic team that fosters creativity and innovation within their projects.

Conclusion

Boming Feng is a dedicated inventor whose work in hair dryer technology exemplifies his innovative spirit. His contributions to Shenzhen Sunselection Technology Co., Ltd. and the broader field of consumer electronics are commendable.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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