Company Filing History:
Years Active: 2013
Title: Bo-Shiun Jiang: Innovator in Semiconductor Packaging
Introduction
Bo-Shiun Jiang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in packaging methods. His innovative approach has led to the development of a unique semiconductor packaging method that enhances the efficiency and reliability of electronic devices.
Latest Patents
Bo-Shiun Jiang holds a patent for a semiconductor packaging method and structure. This method involves providing a substrate with multiple pads, each featuring a first coupling surface that includes both conductive and non-conductive contact areas. The process includes forming a conductible gel with anti-dissociation properties on the substrate, which contains conductive particles and anti-dissociation substances. A chip is then mounted on the substrate, featuring copper-containing bumps that connect electrically with the conductive areas, ensuring optimal performance and durability.
Career Highlights
Jiang is currently employed at Chipbond Technology Corporation, where he continues to innovate in semiconductor packaging. His work has been instrumental in advancing the technology used in various electronic applications. With a focus on enhancing the functionality and reliability of semiconductor devices, Jiang's contributions are highly regarded in the industry.
Collaborations
Throughout his career, Bo-Shiun Jiang has collaborated with notable colleagues, including Cheng-Hung Shih and Shu-Chen Lin. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.
Conclusion
Bo-Shiun Jiang is a key figure in the semiconductor industry, known for his innovative packaging methods that improve electronic device performance. His work at Chipbond Technology Corporation and his collaborations with esteemed colleagues highlight his commitment to advancing technology in this critical field.