Bo Mei

Title: Bo Mei and His Work on SiC MOSFET Radiation Testing.

Introduction

Bo Mei is an inventor based in Beijing, China, and works at the China Academy of Space Technology. His patent work addresses testing the total-dose radiation effects of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices.

Latest Patents

The provided information lists 1 patent for Bo Mei: “Method for Testing Total Dose Effect of SiC MOSFET Device.” The method evaluates a device through sequential testing before irradiation, pre-irradiation annealing, irradiation, post-irradiation annealing, and analysis of post-irradiation test data.

The approach separately measures threshold-voltage shifts associated with radiation-induced defects and with near-interface trap charges inherent near the SiC MOSFET interface. It then analyzes and calculates the results to assess the device’s resistance to total-dose effects, providing guidance for device reinforcement.

Career Highlights

Mei’s listed invention focuses on a structured test process for evaluating the radiation response of SiC MOSFET devices. The method is intended to distinguish different sources of threshold-voltage shift and support a comprehensive assessment of device performance under total-dose radiation.

Collaborations

The provided information names Qingkui Yu and He Wang as Mei’s coworkers. No further details about their roles or specific contributions to the patent are available.

Conclusion

Bo Mei’s listed patent presents a systematic way to evaluate total-dose radiation effects in SiC MOSFET devices and may help inform efforts to strengthen these devices.