St. Laurent, Canada

Blagovest Levitcharsky

This inventor holds 1 USPTO granted patent, plus 1 CIPO patent. Top assignee: 5N Plus Inc.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Blagovest Levitcharsky. Retrieved from https://idiyas.com/inventor/blagovest-levitcharsky

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Blagovest Levitcharsky: Innovator in Cadmium Telluride Production

Introduction

Blagovest Levitcharsky is a notable inventor based in Saint-Laurent, Canada. He has made significant contributions to the field of materials science, particularly in the production of cadmium telluride. His innovative approach has the potential to enhance the efficiency of cadmium telluride manufacturing processes.

Latest Patents

Levitcharsky holds a patent for a method of producing cadmium telluride from elemental cadmium and elemental tellurium. This process allows for the production of multi-kilogram batches of cadmium telluride in just a few hours. His work in this area is crucial for applications in solar energy and other technologies.

Career Highlights

Levitcharsky is currently employed at 5N Plus Inc., a company known for its expertise in specialty metals and compounds. His role at the company allows him to further develop his innovative ideas and contribute to advancements in the field.

Collaborations

One of his notable coworkers is Nicholas Audet, with whom he collaborates on various projects related to cadmium telluride and its applications.

Conclusion

Blagovest Levitcharsky's contributions to cadmium telluride production exemplify the impact of innovation in materials science. His work not only advances technology but also paves the way for future developments in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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