Biswa Bhusan Sahoo

Title: Biswa Bhusan Sahoo: Innovator in SRAM Integrated Memory Circuits

Introduction

Biswa Bhusan Sahoo is a notable inventor based in Bengaluru, India. He has made significant contributions to the field of integrated memory circuits, particularly in enhancing performance and power efficiency. His innovative approach addresses critical challenges in memory technology.

Latest Patents

Biswa Bhusan Sahoo holds a patent titled "Area-efficient process-and-temperature-adaptive self-time scheme for performance and power improvement." This patent describes a method and apparatus for adjusting the timing of a sense-amplifier read operation in SRAM integrated memory circuits. The invention aims to overcome process-and-temperature variations that can affect performance. It includes a charge-injection pull-up transistor that adjusts the rate at which a signal line transitions between voltage levels. Additionally, a process-and-temperature-dependent bias circuit is utilized to control this transistor, ensuring optimal performance under varying conditions. He has 1 patent to his name.

Career Highlights

Biswa Bhusan Sahoo is currently employed at Avago Technologies General IP (Singapore) Pte. Ltd. His work focuses on developing advanced solutions for memory circuits, contributing to the company's reputation as a leader in technology innovation.

Collaborations

He has collaborated with notable colleagues such as Ankur Goel and Dharmendra Kumar Rai, enhancing the innovative capabilities of their team.

Conclusion

Biswa Bhusan Sahoo's contributions to SRAM integrated memory circuits exemplify the impact of innovation in technology. His patent reflects a commitment to improving performance and efficiency in memory systems.