Binghai Yan

Title: Binghai Yan: Innovator in Spintronics

Introduction

Binghai Yan is a prominent inventor based in Rehovot, Israel. He has made significant contributions to the field of spintronics, particularly through his innovative patent related to spin current and magnetoresistance.

Latest Patents

Yan holds a patent titled "Spin current and magnetoresistance from the orbital hall effect." This invention focuses on devices designed for sensing and manipulating magnetic fields based on spin current interactions that are independent of the Spin Hall Effect (SHE) in heavy metals. The technology involves generating spin current in ordinary metals by converting out-of-plane orbital current arising from the Orbital Hall Effect (OHE). The conversion occurs in a thin layer of heavy metal, which allows for a substantial reduction in heavy metal requirements by replacing it with ordinary metal. The applications of this technology include magnetoresistive sensors for detecting and measuring magnetic fields, as well as magnetic tunnel junction data storage units.

Career Highlights

Throughout his career, Binghai Yan has worked with notable organizations such as Yeda Research and Development Co. Ltd. and Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. His work has been instrumental in advancing the understanding and application of spintronics.

Collaborations

Yan has collaborated with esteemed colleagues, including Jiewen Xiao and Amir Capua, contributing to the development of innovative technologies in his field.

Conclusion

Binghai Yan's contributions to spintronics and his innovative patent highlight his role as a key figure in advancing technology related to magnetic fields and data storage. His work continues to influence the field and pave the way for future innovations.