Company Filing History:
Years Active: 1989-1994
Title: Innovations of Bing W Shen in DRAM Technology
Introduction
Bing W Shen is a prominent inventor based in Richardson, TX (US), known for his significant contributions to the field of memory technology. With a total of 7 patents to his name, Shen has made remarkable advancements in the design and functionality of DRAM memory cells.
Latest Patents
One of Shen's latest patents is focused on a high-performance composed pillar DRAM cell. This innovative memory cell structure features a unique design where each memory cell is formed at a pillar. The storage plate is an inversion region created by a field plate that surrounds all sides of each pillar, separated by a storage dielectric film. The field plate is arranged in a grid shape and is positioned at the bottom of trenches surrounding the array of pillars, serving as the fixed plate for all storage capacitors in the array. At the top of each pillar, a diffusion connects to the bit lines. Additionally, word lines, formed of a polysilicon filament with tungsten deposited via selective CVD, extend in one direction above the field plate. This design ensures that the word line causes conduction between the inversion region and the top diffusion for its associated row, while preventing conduction for adjacent rows.
Career Highlights
Bing W Shen has established a successful career at Texas Instruments Corporation, where he has been instrumental in advancing memory technology. His work has not only contributed to the company's reputation as a leader in the semiconductor industry but has also paved the way for future innovations in DRAM technology.
Collaborations
Throughout his career, Shen has collaborated with notable colleagues, including Robert R Doering and William F Richardson. These partnerships have fostered a creative environment that has led to groundbreaking advancements in memory cell design.
Conclusion
Bing W Shen's contributions to DRAM technology exemplify the impact of innovative thinking in the field of electronics. His patents and work at Texas Instruments Corporation continue to influence the development of advanced memory solutions.
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