San-Xia Town, Taiwan

Bing-Hung Chen

USPTO Granted Patents = 1 

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Bing-Hung Chen in Plasma Processes

Introduction

Bing-Hung Chen is a notable inventor based in San-Xia Town, Taiwan. He has made significant contributions to the field of plasma processes, particularly through his innovative patent. His work focuses on enhancing the efficiency and effectiveness of plasma applications in various technologies.

Latest Patents

Bing-Hung Chen holds a patent related to "DC bias in plasma process." This invention involves generating a plasma that contains negatively charged oxygen ions. The process includes exposing a substrate to this plasma while it is positioned on a pedestal. A negative direct current (DC) bias voltage is applied to the pedestal during exposure, which serves to repel the negatively charged oxygen ions from the substrate. This innovative approach aims to improve the outcomes of plasma processing.

Career Highlights

Bing-Hung Chen is associated with Taiwan Semiconductor Manufacturing Company Ltd., a leading entity in the semiconductor industry. His role in this prestigious company allows him to work on cutting-edge technologies and contribute to advancements in semiconductor manufacturing.

Collaborations

Bing-Hung Chen collaborates with esteemed colleagues such as Sheng-Liang Pan and Chia-Yang Hung. Their combined expertise fosters an environment of innovation and progress in their respective fields.

Conclusion

Bing-Hung Chen's contributions to plasma processes through his patent demonstrate his commitment to innovation in technology. His work not only enhances the efficiency of plasma applications but also reflects the collaborative spirit of the semiconductor industry.

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